HEXITEC EPSRC OPEN DAY

18th SEPTEMBER 2008

There will be a mid term review of the HEXITEC basic technology programme funded by EPSRC on the 18th September at Rutherford Appleton Laboratory, Oxford, UK. HEXITEC was funded by EPSRC to make, characterise, coat, bond and fabricate new pixellated detectors for high energy X-ray applications.

The meeting will discuss progress in CZT growth, bonding, coating and pixellated device production. Potential applications of the fabricated detectors in security, medicine, space science defence and synchrotron radiation will be discussed.

There will be a poster session from 12.00 until 13.30 covering the projects in more detail.

*If you wish to attend please email Naomi Hyde (naomi.hyde@manchester.ac.uk) to confirm by 9th September 2008 at the latest*

Kind regards

Professor Robert Cernik

DRAFT AGENDA

10:00 TEA/COFFEE on ARRIVAL
10:20

Professor Robert Cernik - University of Manchester

'An introduction to the HEXTIREC Basic Technology Project and progress to date'

11:00

Dr Geoff Harding - GE Instruments

'Next-Generation X-ray Diffraction Imaging in security screening'

11.30

Professor Paul Barnes - Birkbeck, University of London

'Applications of Tomographic Energy Dispersive Diffraction Imaging (TEDDI)'

12:00 LUNCH with POSTER SESSION
13:30

Dr Andy Boston - University of Liverpool

'The need for better detector materials for gamma-ray spectrometry'

14:00

Dr Arnab Basu - Kromek

'The use of Cadmium Telluride (CdTe) in Security Applications'

14:30

Dr Ian Jupp - DSTL

'The use of high efficiency X-ray detectors in the defence industry'

15:00
TEA/COFFEE
15:20

Professor Bruce Swinyard - Rutherford Appleton Laboratory

'CZT and Space Science'

15:50 Open Session/Questions
16:15 MEETING CLOSE

 

NEWS

First Successful CdTe/GaAs Crystal

Key to the growth of large crystals, by MTPVT, is the availability of suitable seed plates. CdTe seed plates are scarce and expensive. An alternative is to grow the crystals on a foreign substrate which is readily available in larger diameter and less expensive – what we have termed bulk crystal heteroepitaxy. Photo shows the first successful CdTe/GaAs crystal, still in its growth tube.

 

 

 

 

© HEXITEC 2006